Fabrication and Characteristics of Energetic Igniters Realized Through Sputtered Tantalum Nitride(TaN) Film Bridge

摘要

This paper introduces energetic igniters fabricated using TaN film bridge by magnetron sputtering. It is inferred from the image of wet-etched TaN film bridge that film edge is clearly visible and relatively smooth with lateral erosion size of 5μm. The X-ray diffraction (XRD) and Temperature Coefficient of Resistance (TCR) results show that the crystalline of TaN films has great influence on the TCR values by changing the N_2 partial pressure. The TaN films in this paper exhibit a near zero TCR value of approximately 10 ppm/°C. The electrical explosion characteristics employing a capacitor discharge firing set at the optimized charging voltage of 45V reveal that an excellent explosion phenomenon of TaN film bridge is observed with small ignition delay time, high explosion temperature, much more bright flash of light and much large quantities of the ejected product particles. The peak explosive temperature of TaN film bridge at various dimensions is ranging from 3500K to 5700K, which is almost as same as that of the semiconductor bridge.