Fluorine Doping Effects on the Electric Property of BiFeO_3 Thin Films

摘要

F doping BiFeO_(3-x)F_x (x=0, 0.02, 0.04, 0.06, 0.08) thin films were successfully fabricated on ITO/glass substrates by sol-gel method. X-ray diffraction analysis indicated that the un-doped BiFeO_3 and F doping BiFeO_3 thin films presented rhombohedral structure with the space group R3c. F-doping is found to significantly enhance the dielectric constant and decrease the leakage current density for x=0.08 compared with x=0. This study provides direct evidence that the multiferroic characteristics of BiFeO_3 are sensitive to the anion doping, such as F, providing a convenient alternative to manipulate the electric polarization in multiferroic oxides.