The Addition of Reduced Graphene Oxide Layer to TiO_2 Photoanode of DSSC Using UV Oven Spraying Method

摘要

The third generation of photovoltaic, called as dye-sensitized solar cells (DSSC) have attracted much attention and currently become an interesting research topics. One important part of DSSC that determines its performance is photoanodes. Recently, graphene has been used to enhance the efficiency of DSSC through the increasing of electronic transportation. Introduction of graphene into DSSC is realized by changing the form of graphene oxide (GO) into reduced graphene oxide (rGO) through the reduction process. In this work, DSSC based on TiO_2 photoanodes modified by rGO were fabricated. rGO layer was deposited on TiO_2 mesoporous layer using UV-oven spraying method. We found that parameters of DSSC such as open circuit voltage, short circuit current and fill factor increase with the incorporation of rGO layer in TiO_2 photoanodes. DSSC with TiO_2/rGO photoanodes has the highest power conversion efficiency of 11.01% which contributed from the enhancement of short circuit current. The rGO layer found to be an effective layer to block charge recombination in photoanode.