Growth of GaAsP by Solid Source Molecular Beam Epitaxy

摘要

The GaAsP crystal material grown on GaAs substrate has been extensive applications in the area of photoelectronic device. There because GaAsP have advantageous photoelectronic performance and adjustable band gap. We report growth of GaAs_(1-x)P_x grown on GaAs substrate by solid source molecular beam epitaxy (SSMBE). On the basis of the optimized V/III flux ratio, appropriate growth rate, and the substrate temperature for sample growth, different composition GaAs_(1-x)P_x layers had been grown on GaAs top. Lattice-mismatched became the big challenges to high-quality epitaxial growth of the GaAs_(1-x)P_x materials on GaAs substrate. The crystalline quality, surface morphology were performed by applying high resolution X-ray diffractometry (HRXRD) and high resolution optical microscopy. The etched region and internal defect were also investigated.