Temperature Dependent Electrical Properties of Rare-Earth Metal Er Schottky Contact on p-type InP

摘要

The current-voltage (I-V) characteristics of the Er/p-InP Schottky barrier diodes (SBDs) have been investigated in the temperature range of 300-400K in steps of 25K. The electrical parameters such as ideality factor (n) and zero-bias barrier height (Φ_(bo)) found to be strongly temperature dependent. It is observed that Φ_(I-V) decreases whereas n increases with decreasing temperature. The series resistance is also calculated from the forward I-V characteristics of Er/p-InP SBD and it is found to be strongly dependent on temperature. Further, the temperature dependence of energy distribution of interface state density (N_(SS)) profiles is determined from the forward I-V measurements by taking into account the bias dependence of the effective barrier height and ideality factor. It is observed that the N_(SS) values increase with a decrease in temperature.