Simulation of Quantum Dot Floating Gate MOSFET Memory Performance using Various High-K Material as Tunnel Oxide

摘要

In this paper, performance of quantum dot floating gate MOSFET memory is simulated by replacing the SiO_2 tunnel oxide with high-κ material. There are three high-k material simulated in this paper, HfO_2, ZrO_2, and Y_2O_3. As we know that high-κ material is used nowadays to reduce leakage current, so this paper demonstrates the application of high-κ material to reduce leakage current in non-volatile memory quantum dot based floating gate MOSFET. Simulation results of this paper show the leakage current can be suppressed by using high-κ material as tunnel oxide up to 10 times. Furthermore, this paper also shows that the memory performance can be properly sustained. The writing and erasing time are depend on tunneling current probability which calculated using transfer matrix method. The writing time and erasing time for HfO_2 and ZrO_2 are 150 nanosecond and 15 nanosecond.