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Copper Indium Silicon nanocomposite thin film deposited by magnetron co-sputtering

机译:铜铟硅纳米复合材料薄膜磁控掺杂沉积

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Thin CuInSi nanocomposite films were prepared by magnetron co-sputtering. The structures of CuInSi nanocomposite films were detected by X-ray diffraction(XRD); XRD studies of the annealed films indicate the presence of CuInSi, a peak at about 20=42.400°. The morphology of the film surface was studied by SEM. The nanocrystallization with needle shape of CuInSi could be seen clearly. The grain size is a few hundred angstroms.
机译:通过磁控凝固制备薄的Cuinsi纳米复合膜。通过X射线衍射(XRD)检测Cuinsi纳米复合膜的结构;退火薄膜的XRD研究表明CuinSi的存在,约20 = 42.400°的峰。通过SEM研究了薄膜表面的形态。可以清楚地看到具有Cuinsi的针形状的纳米晶化。粒度是几百埃。

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