Post Annealing Temperature Effect on Photoluminescence Spectroscopy of ZnO Thin Film

摘要

This paper reports on the effect of annealing temperature on the photoluminescence (PL) properties of ZnO thin film. Sol-gel spin coating method was used to prepare the ZnO templates on silicon substrate. ZnO thin films were then deposited by thermal chemical vapor deposition technique by using Zinc Acetate dihydrate as a precursor. Deposited films are annealed at various temperatures; from 650°C to 850°C for 1 hour. The effect of annealing on the optical, structure and electrical properties is investigated. FE-SEM images shows sizes of ZnO nanothorn encapsulate in balls changes as the annealing temperature increased. The optical properties were characterized using photoluminescence (PL) spectrometer with 325nm UV light from a He-Cd laser at room temperature and the electrical properties were characterized using Current-Voltage (I-V) measurement.