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A CdSe quantum dot photodetector for hyperspectral imaging in the visible region

机译:用于可见区域中的高光谱成像的CDSE量子点光电探测器

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A spectrally resolving quantum dot photodetector has been designed and fabricated which is able to discriminate wavelengths in the visible region. The device consists of a monolayer of 5.4 nm diameter CdSe nanoparticles that have been sandwiched between two organic layers of Hexanedithiol, all on a highly doped p-type InP substrate. A thin, semitransparent layer of gold deposited on the top of the device made the second contact. The two layers of Hexanedithiol act as tunnel barriers for electrons inside the nanoparticles. Changing the bias voltage across the device, causes specific energy states inside the quantum dot to align with the conduction band edge of the InP. Any excited carriers in these energy levels will tunnel trough the organic barrier and be collected as photocurrent. The responsivity and noise equivalent power has been measured for two wavelengths.
机译:已经设计和制造了一种光谱分辨量子点光电探测器,其能够区分可见区域中的波长。该装置由直径为5.4nm的直径CdSe纳米颗粒组成,该纳米颗粒已夹在两层六硝基硫醇之间,全部在高度掺杂的p型InP基板上。沉积在装置顶部的薄,半透明的金层制成第二触点。两层六烷基二醇用作纳米颗粒内的电子的隧道屏障。改变设备上的偏置电压,使量子点内的特定能量状态与INP的导通带边缘对齐。这些能量水平的任何激动的载体都将隧道槽槽,并将其收集为光电流。针对两个波长测量了响应性和噪声等效功率。

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