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Study on defect detection of IC wafer based on morphology

机译:基于形态学的IC晶片缺陷检测研究

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With the development of the micro-processing, silicon material technique, the silicon structural design, mass production, the scientific researches on integrated circuit have been developed rapidly. Defect detection and fault diagnosis as critical design requirements is necessary to achieve high-quality, cost-effective multichip systems. An increasingly difficult task, however, is the inherent need to accurately locate, identify the defects within the microchip. A method of defect detection of IC wafer has been investigated using mathematical morphology. Firstly, the differential charts of the pending images and the intact image of IC wafer are computed and digitized to two gray levels, i.e. black and white. Secondly, the brightness of the pending images have been transformed to the same brightness as that of intact image in order to make the arithmetic is robust for various illumination conditions. Next, the defects on the binary image of differential chart can be found and dealt with mathematical morphology. Finally, several representative characteristics are proposed to extract and describe the defects of IC wafer image, for example perimeter, area, macro axis, minor axis, eccentricity ratio, centroid, circularity and rectangular degree, etc.
机译:随着微加工,硅材料技术,硅结构设计,批量生产的发展,对集成电路的科学研究已经发展迅速。缺陷检测和故障诊断作为关键设计要求是实现高质量,经济高效的多芯片系统所必需的。然而,越来越困难的任务是准确定位的固有需要,识别微芯片内的缺陷。使用数学形态研究了IC晶片的缺陷检测方法。首先,计算待审图像的差分图和IC晶片的完整图像,并将其数字化为两个灰度级,即黑白。其次,待审视图像的亮度已被转换为与完整图像相同的亮度,以使算术对各种照明条件具有鲁棒性。接下来,可以找到差分图表的二进制图像上的缺陷并处理数学形态学。最后,提出了几种代表性特征来提取和描述IC晶片图像的缺陷,例如周边,面积,宏轴,短轴,偏心率,质心,圆形度和矩形度等。

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