首页> 外国专利> Morphology Analysis Method for Bulk Defects of Semiconductor Wafers and Morphology Analysis Method for Surface Defects

Morphology Analysis Method for Bulk Defects of Semiconductor Wafers and Morphology Analysis Method for Surface Defects

机译:半导体晶片大缺陷的形态分析方法和表面缺陷的形态分析方法

摘要

The present invention relates to a morphology analysis method for bulk defects of semiconductor wafers and a morphology analysis method for surface defects.;The morphology analysis method of the bulk defect of the present invention includes a sample preparation step of identifying a location of a bulk defect present in a wafer and marking a predetermined mark in a region near the location of the bulk defect; A sample manufacturing step of preparing a sample capable of analyzing the morphology of the bulk defect; And an analysis step of analyzing the morphology of the bulk defect.;According to the method for analyzing the morphology of the surface defect of the present invention, the position of the surface defect existing at a predetermined depth relative to the surface of the wafer is determined to mark a predetermined mark in the region near the position where the surface defect exists. Sample preparation step to; A sample manufacturing step of preparing a sample capable of analyzing the morphology of the surface defects; And an analyzing step of analyzing the morphology of the surface defects.;Therefore, by accurately identifying the cause of the defect due to the bulk defect and the surface defect, the reliability of the semiconductor device can be improved.
机译:本发明涉及半导体晶片的整体缺陷的形态分析方法和表面缺陷的形态分析方法。本发明的整体缺陷的形态分析方法包括识别整体缺陷的位置的样品制备步骤。存在于晶片中并在体缺陷位置附近的区域中标记预定标记;样品制备步骤,制备能够分析体缺陷形态的样品;以及分析体缺陷形态的分析步骤。根据本发明的表面缺陷形态的分析方法,存在于相对于晶片表面预定深度处的表面缺陷的位置为:确定在存在表面缺陷的位置附近的区域中标记预定标记。样品制备步骤;样品制备步骤,制备能够分析表面缺陷形态的样品;以及分析表面缺陷的形态的分析步骤。;因此,通过准确地识别由于体缺陷和表面缺陷引起的缺陷的原因,可以提高半导体器件的可靠性。

著录项

  • 公开/公告号KR100279962B1

    专利类型

  • 公开/公告日2001-03-02

    原文格式PDF

  • 申请/专利权人 삼성전자주식회사;

    申请/专利号KR19970076789

  • 发明设计人 조성훈;허태열;

    申请日1997-12-29

  • 分类号H01L21/66;

  • 国家 KR

  • 入库时间 2022-08-22 01:12:35

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号