Fabrication and Luminescence Properties of Monoclinic Gallium Oxide (β-Ga{sub}2O{sub}3) Nanostructures

摘要

Monoclinic Gallium Oxide (β-Ga{sub}2O{sub}3) nanostructures including nanowires, nanorods, nano and micro-pillars, nanosheets and nanobelts were successfully fabricated by a simple and efficient thermal evaporation and condensation technique under argon flow. The structures have been investigated by the scanning electron microscope (SEM), X-ray diffraction (XRD) and energy dispersive X-rays spectroscopy (EDX) techniques and shown that nanostructures are predominantly (3-Ga{sub}2O{sub}3 without other crystallographic phases. Cathodoluminescence (CL) of as-grown nanostructures was investigated in the 15-300K temperature range and exhibit luminescence band centered at 485nm at 300K due to donor-acceptor pair recombination. A new luminescence band centered at 387nm develops at temperature below 150K due to self-trapped exciton recombination.