化学气相沉积法制备β-Ga2O3纳米结构及其缺陷发光性质研究

摘要

β-Ga2 O3 nanowires ( NWs) and nanoribbons ( NBs) were synthesized under different gas flow rates via chemical vapor deposition ( CVD) method. The results show that the NWs and NBs are monoclinic structure. NWs has higher crystal quality than NBs. The cathode luminescence ( CL) spectra show that the NWs and NBs have strong UV-blue emission band. By comparing the CL spec-tra of the NWs and NBs, it is found that the UV and blue luminescence of β-Ga2 O3 NWs and NBs located at 374 and 459 nm, mainly due to radiative recombination emission of oxygen vacancies ( VO(Ⅰ) and VO(Ⅱ) ) .%利用化学气相沉积法(CVD),在不同压强下分别得到β-Ga2 O3纳米线(NWs)和纳米带(NBs).研究结果表明,获得的NWs与NBs均为单斜结构的β-Ga2 O3,且NWs结晶质量优于NBs.在阴极射线发光(CL)光谱中,发现NWs与NBs在近紫外和蓝光波段有较强的发光.对比NWs与NBs的CL光谱,推断β-Ga2 O3在374 nm和459 nm的近紫外和蓝色发光峰分别来自于Ⅰ型和Ⅱ型氧空位(VO(I)和VO(Ⅱ))的缺陷复合.