Coupled Nanoscratch and 4-Point Bending Evaluations of Adhesion in SiCN/Cu/Ta/TaN/SiCVSi Stacked Layers

摘要

Nanoscratch test used for small area measurements and four-point bending test applied for quantitative measurements were coupled to evaluate the adhesive strengths of SiCN/Cu/Ta,/TaN/SiO_2/Si stacked layers. The similarities and differences of the two methods concerning adhesion, position of the delamination interface, and plastic deformation of the delaminated film were estimated. It was found that the nanoscratch test gave similar adhesion properties when the delamination interface was the same as that formed by the four-point bending test. The four-point bending test displayed clearer results compared to the nanoscratch test because energy for delamination was not used in plastic deformation and the crack could propagate further. These results suggest that coupling the nanoscratch and four-point bending tests is powerful way to estimate and understand adhesion of thin film materials.