The continual device perforinatice increases by the semiconductor industry has been largely driven by (lie ftihricalion of smaller structures with hthograph1: .4s feature sizes approach sub-I (K) nm, the photohihographic process must he controlled with tolerances of (2 to 5) nm. dimensions comparable to the molecular size of (he polymer chains in the photoresist imnagiiig material. New experimental methods are needed to measure transport and materials science plienoniena over nanometer length scale.c to provide critically needed data for the understanding, design, and control of new lithographic materials and processes. In collaboration with IBM and the University of Texas, we directly measured the spatial evolution of a reaction front, within a photoresist, with nanometer resolution using neutron and x-ray reflectometry and a deuterium-laheled photoresist polymer.
展开▼
