Analysis of Temperature Effect on Small-Signal- Equivalent-Circuit Parameters for AlInN/GaN MOS-HEMT

摘要

This paper introduces an effect of temperature on small-signal equivalent circuit parameters have been analyzed for "AlInN/AlN/GaN metal-oxide-semiconductor high-electron- mobilit-transistor (MOS-HEMT)". The analysis has been performed through the temperature range from −50 °C to 100 °C by S-parameter calculations at 100 GHz frequency. The thermal analysis of equivalent circuit parameters was investigated for first-time with the proposed device. The equivalent-circuit-parameters such as intrinsic delay time (τ), gate-source capacitance (Cgs), extrinsic resistances (Rg, Rs, Rd), and intrinsic resistances (Rds, Rin, Rgd) show a positive shift with increasing temperature. On the other hand, intrinsic transconductance (gm), drain-source capactance (Cds), and gate-drain capactance (Cgd) show a negative shift with temperature. Obtained results will give some valuable information for design optimizations of GaN-based MMICs and other high power/frequency applications.