Robustness Analysis of the Dual-band Kink States in Valley-Hall Photonic Topological Insulators

摘要

Considerable researches have proved that valley (i.e., a binary degree of freedom), has the potential to become a new candidate of information carriers. In recent years, several researchers have demonstrated photonic topological insulators (PTIs) could support valley-Hall gapless kink states. In this work, we propose a valley-Hall PTI with topological kink states working at two separated frequency bands. Besides, the valley-Hall PTI is in a microwave substrate-integrated circuits. Moreover, we analyze the robustness of kink states by adjusting the strength of the perturbations. In contrast to the previous works, our analysis proposed here demonstrates the significance of the perturbations on the robustness of these kink states.