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Chloropolymer Precursor Utilization for the Nanostructured Co-Containing Carbon Layers Formation on Silicon Substrate

机译:氯聚合物前体利用硅衬底形成纳米结构的共含碳层

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The possibility of nanostructured Co-containing carbon layers formation by means of the approach based on polyvinyl chloride alkaline dehydrochlorination in dimethyl sulfoxide in the presence of Co-nitrate is shown. From the mentioned reaction mixture, the layers of the carbon polymer precursor - polyvinylene formed during dehydrochlorination were deposited on the silicon wafer by spin coating. The obtained layers heat treatment up to 400 °Cresults in the formation of Co-carbon nanostructured continuous layers which structure is studied by the atomic force microscopy.
机译:示出了借助于基于基于聚氯乙烯碱性脱水在共硝酸二甲醚中基于聚氯乙烯碱性脱水的方法形成的纳米结构的碳层的可能性。通过提到的反应混合物,通过旋涂沉积在脱氯化氯化过程中形成的碳聚合物前体 - 聚偏二乙烯基层。将所得层热处理高达400°的聚会,在形成共碳纳米结构的连续层的形成,该连续层由原子力显微镜进行研究。

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