GaN laser diodes for quantum technologies

摘要

Quantum technologies containing key GaN laser components will enable a new generation ofprecision sensors, optical atomic clocks and secure communication systems for many applicationssuch as next generation navigation, gravity mapping and timing since the AlGaInN material systemallows for laser diodes to be fabricated over a wide range of wavelengths from the u.v. to the visible.We report our latest results on a range of AlGaInN diode-lasers targeted to meet the linewidth,wavelength and power requirements suitable for optical clocks and cold-atom interferometrysystems. This includes the [5s~2S_(1/2)-5p~2P_(1/2)] cooling transition in strontium~+ ion optical clocks at 422nm, the [5s_2~1S_0-5p~1P_1] cooling transition in neutral strontium clocks at 461 nm and the [5s~2s_(1/2) –6p~2P_(3/2)] transition in rubidium at 420 nm.Several approaches are taken to achieve the required linewidth, wavelength and power, including anextended cavity laser diode (ECLD) system and an on-chip grating, distributed feedback (DFB) GaNlaser diode.