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Effect of increasing etchant concentration to accelerate synthesis of 9-μm-long TiO_2 nanotubes

机译:蚀刻剂浓度增加以加速9-μm-long TiO_2纳米管的合成的影响

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During electro-deposition of a TiO_2 film on titanium foil, an etching agent supplies ionic species that create the desired morphology by chemical dissolution of the oxide layer. The etchant ions attack both titanium ions and the oxide film to form hexafluorotitanate complexes, water and hydroxyl species. In this study, an attempt was made to reduce the duration of a TiO_2 film electro-deposition process by increasing the chemical dissolution rate. Two 127 μm-thick titanium foil substrates were anodised for different durations in an anhydrous polar organic solvent containing different amounts of an etchant. This yielded 9 μm-long nanotubes. Anodisation current density measurements for a two hour process showed slow chemical dissolution when the amount of etchant was low. In an attempt to speed-up the electro-deposition process, the amount of etchant was increased and anodisation carried out for only an hour. This yielded films (consisting of nanotube arrays) that are equal in thickness to that obtained in the two hour process. However, scanning electron microscopy revealed un-etched regions of the film between the tubes when the etchant concentration is high. These fragments are dimensional irregularities in an otherwise uniform tubular structure and hence are defect sites that could reduce charge transport efficiency. The study shows that the nanotube array quality is reduced when the duration of the anodisation process is shortened by an increased etch rate, without further optimisation of the anodisation parameters.
机译:在钛箔上的TiO_2膜的电沉积期间,蚀刻剂供应通过氧化物层的化学溶解来产生所需形态的离子物质。蚀刻剂离子攻击钛离子和氧化物膜以形成六氟钛酸盐,水和羟基物质。在该研究中,通过增加化学溶解速率来使试图降低TiO_2膜电沉积过程的持续时间。在含有不同量的蚀刻剂的无水极性有机溶剂中阳极氧化两种127μm厚的钛箔基材。这产生了9μm长的纳米管。蚀刻剂量低至较低时,两个小时工艺的氧化电流密度测量显示出慢的化学溶解。在试图加速电沉积过程中,蚀刻剂的量增加,并且仅进行了一小时的散发。该产生的薄膜(由纳米管阵列组成),其厚度与在两个小时过程中获得的厚度相等。然而,当蚀刻剂浓度高时,扫描电子显微镜显示在管之间的薄膜之间的未蚀刻区域。这些片段是尺寸均匀的管状结构的尺寸不规则性,因此是可以降低电荷传输效率的缺陷位点。该研究表明,当通过增加的蚀刻速率缩短散热处理的持续时间时,纳米管阵列质量降低,而无需进一步优化散热参数。

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