Fabrication of Double Layer Anti Reflection Coating TiO_2-SiO_2 on Silicon Substrate with Pulsed Laser Deposition Method

摘要

Anti reflection coating (ARC) is used in solar cell that functions to increase the quantity of light absorption. To obtainmaximum results would require a good combination between ARC’s materials and the synthesis technique. TiO_2-SiO_2 wasused as ARC materials because it has good passivity and high refractive index value. Pulsed Laser Deposition (PLD)method was used for synthesis technique because it has high photon energy and high temperature. Characterization aredone by using Field Effect Scanning Electron Microscope (FESEM), X-Ray Diffraction (XRD), and Ultraviolet-Visible(UV-Vis) Spectrophotometry. The best result, anti reflection coating TiO_2-SiO_2 successfully reduced the reflection valuefrom 35.69% to 14.11% for silicon substrate. It was gained with the properties of laser’s wavelength at 532 nm, laser’senergy at 100 mJ, and deposition time at 20 seconds.