Numerical Study of Heating Structure in Cold-Wall MOCVD Reactor by Induction Heating

摘要

On the traditional heating structure of MOCVD reactor, the temperature distribution of substrate is nonuniform, which goes against the film growth. This paper focuses on the numerical calculation of the heating structure, by using SiC and graphite as the materials of the new susceptor and coupling with multifields. By adjusting the position and size of each of the ring body of graphite in the susceptor, the heat generation and heat transfer are changed, which leads to the approximately uniform heat conducted to the substrate, thus obtaining a more uniform temperature distribution. Compared to the traditional structure, under the same heating condition, the heating efficiency is improved about 9.1%, the uniformity of temperature distribution is improved more than 80%. This is very favorable for the growth of thin films.