Preparation of Large Size Monolayer MoS_2 by a Two-Step Heating Process by CVD

摘要

Due to their fascinating properties, two-dimensional monolayer transition metal dichalcogenides (TMDs) have attracted a lot research interests in the recent years. Chemical vapor deposition (CVD) is the most effective way to grow monolayer TMDs in large area. However, to grow high quality monolayer TMDs controllably by CVD is still a challenge. Here, a two-step heating CVD process was developed to grow monolayer MoS_2, which the crystal size is obviously larger than that grown by traditional one-step heating CVD process. The effects of growing time and the distance from the Mo source to the size and density of MoS_2 crystals are also studied. The largest size of individual MoS_2 triangle reaches 62 μm in edge length.