Measurement complex on the basis of AFM for investigating charge carrier distribution in semiconductor barrier structures

摘要

Measurement complex on the basis of atomic force microscope for investigating electrophysical properties of semiconductor barrier structures is developed and described in this paper. Electromechanical model of point barrier metal-semiconductor contact is clarified. A method to measure electrical capacitance of point barrier contact is described. We developed software to control measuring complex and obtained data about distribution of charge carriers in structures with quantum wells.