Comparing and Modeling Power GaN FETs for Switching Converter Applications

摘要

To use new wide bandgap power devices in power conversion applications, designers must integrate behavioral models that provide accurate representations of electrical characteristics into their designs. This work surveyed the electrical characteristics, and simulation models, as well as studying the switching performance of commercial and laboratory-fabricated GaN FETs. The results show that the commercial GaN FETs have superior switching performance, whereas the laboratory GaN FETs still have room for improvement.