A phenomenological model of the resistive switching for Hf-based ReRAM devices

摘要

This paper presents the current-voltage (I-V) characteristics of HfO₂-based Resistive Random Access Memories (ReRAM). A statistical analysis of the main electrical parameters of the set and reset switching is done and compared among devices of different areas. With this experimental evidence, a phenomenological model for the resistive switching mechanism in bipolar memories is proposed. This model not only captures the electrical response, but also explains the stochastic behavior reported in this kind of devices.