We report on FDTD simulation, fabrication and optical characterization of InP-based L3 photonic crystal (PhC) cavities embedded with InAs/InP quantum dots (QDs) emitting at telecom wavelengths. Temperature tuning experiments show evidence of a weak coupling of an exciton line and M1 ground mode with Q-factor value exceeding 8000. The effect of the cavity designs and extractor structures on M1 Q-factor and mode intensity emitting at 1.55 μm are investigated. The used extractor structures result in a slight decrease in M1 Q-factors and an increased M1 mode intensity by a factor of 20, which is a promising step for Purcell-enhanced single-photon sources at the telecom wavelengths.
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