Quantitative characteristics of traps in AIGaN/GaN MIS-HEMT via transient capacitance measurement

摘要

The electrical property degradation of AlGaN/GaN MIS-HEMT, including degradation of output characteristics, a higher ON-resistance and a threshold voltage negative shift (～1.8V), is correlated with near-interface trap behaviours in SiN/AlGaN. These traps are quantitatively characterized using the transient capacitance measurement, from which we could estimate the near-interface trap densities in the SiN/AlGaN. Measurements reveal the trap density before step-stress with 1.404×10~(15)cm~(-3) and an increased density of 1.709×10~(15)cm~(-3) after step-stress. A hot electron injection model is used to discuss the relationship between trap behaviours and device reliability.