Interface state density effect on the performance of graphene silicon heterojunction solar cell

摘要

A planar structure consisting of graphene layer as the hole transport material, and n-type silicon as substrate is simulated. The degradation of this cell caused by high interface state density has been carried out. The simulated results match published experimental results indicating the accuracy of the physics-based model. Using this model, the effect of interface state density as zero, 1×10~(16)cm~(-2), 1×10~(17)cm~(-2) on the photovoltaic performance has been studied. The obtained IV and EQE characteristic based on realistic parameters shows that the interface state playing a prominent role in graphene silicon schottky contact.