E-band reflection-type phase shifter with uniform insertion loss

摘要

An 81-86 GHz reflection-type phase shifter (RTPS) with uniform insertion-loss (IL) for E-Band phased array transceivers is reported in this paper. The RTPS is based on two loaded couplers and implemented in 120 nm SiGe BiCMOS process. The 6-bit phase shifter achieves >195° phase variation across the upper E-band with less than ±0.5 dB insertion loss variation over all phase states. The measured IL at 84 GHz is 7.4±0.15 dB. Measured RMS gain and phase error are less than 0.2 dB and 2°, respectively, across 81-86 GHz. The IC occupies area of 350 × 700 μm^2.