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Stark effect of shallow donor impurities in HgS Inhomogeneous Quantum Dots

机译:浅供体杂质在HGS不均匀量子点中的影响

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Using the variational method, within the effective mass approximation, we have calculated the binding energy and the Polarizability of a shallow donor confined to move in [CdS/HgS/CdS] Inhomogeneous Quantum Dots, in the presence of a uniform electric field. We consider an infinitely deep well and we present our results as function of the size of the well and for several values of the electric field strength: (i) The Polarizability decreases when the electric field increases. We find mat the Polarizability it is more influenced by the quantum confinement than by the electric field, (ii) The binding energy depends on the inner and the outer radius of the IQD, decrease when the electric field increases and depends strongly on the donor position, (iii) We have demonstrated the existence of a critical value of radius ratio which can be used to distinguish the tree dimension confinement from the spherical surface confinement.
机译:在有效质量近似下,使用变分方法,我们已经计算了浅供体的结合能量和浅供体的极化性,在存在均匀的电场存在下在[Cds / hgs / cds]不均匀的量子点中移动。我们考虑无限的深井,我们将我们的结果作为井的函数和电场强度的几个值呈现:(i)当电场增加时,极化性降低。我们发现垫子通过电场的量子约束更加极化,(ii)结合能量取决于IQD的内部和外半径,当电场增加并且在施主位置时强烈取决于施主位置(iii)我们已经证明了半径比的临界值的存在,其可用于区分树尺寸限制与球面限制。

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