Growth of GaN/InGaN Films and Heterostructures Via Super-Atmospheric MOCVD

摘要

In the interest of improving crystalline quality and optical performance of MOCVD grown semiconductors a unique super-atmospheric reactor was designed and fabricated. This reactor has since been used to fabricate GaN/InGaN multi-quantum-well heterostructures under superatmospheric growth conditions. The resulting samples were analyzed through in-situ and ex-situ measurements.