Optimisation study on few layer formations of MoS_2 thin films by a novel sulfurization method

摘要

The hexagonal structure of molybdenum disulfide (2H-MoS_2) thin filmswere prepared with the following subsequent processes, 1. thin deposition of molybdenum film by using high vacuum DC magnetron sputtering, 2. sulfur deposition under atmospheric pressure condition, 3. sulfurization process in vacuum condition. The sulfur and molybdenum layers with diverse deposition durations were stacked in different configurationsand tailored sulfurization temperature to achieve single phase MoS_2. Characterization techniques such as Atomic Force Microscopy (AFM), X-ray Diffraction (XRD), Raman and UV-visible spectroscopy were used to study the microstructural and optical properties of the prepared thin films. XRD reveals a peak at 13.95o (2θ) corresponding to (002)plane for higher sulfur deposition time and annealing temperature. The Raman peaks of E~1_(2g) and A_(1g) modes were observed at 384 and 409 cm~(-1). The band gap of the sample was calculated to be 1.48 eV from reflectance data corresponding to formation of few layer MoS_2.