We present the synthesis of functionalized-silicon nanowire (f-SiNWs) array which is currently an intense subject of research due to a wide range of opportunities for new generations of nanoscale electronic and optical devices. SiNW arrays were fabricated by a metal-assisted electrodeless wet chemical etching (MEWCE) of highly doped silicon (100) wafers. SiNWs are fabricated at different parameters like etching times, the concentration of chemicals, type of Si wafer, etc. Analysis of various deposition parameters has been carried out to optimize the growth of SiNW. The surface morphology of the etched Si wafer has been carried by electron microscopy. The origin of photoluminescence (PL) in SiNWs has been studied. Phonon confinement effect of functionalization has been analyzed by Raman spectroscopy and PL spectra.
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