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The electronic energy bands and state density of Aurum-doped with one-edge narrow armchair graphene nanoribbons

机译:用一边窄扶手椅石墨烯纳米喷孔的电子能带和状态密度

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The charge density, electronic energy band and density of states of Au-doped armchair graphene nanoribbons (AGNRs) with one-edge are investigated using the local density approximation based on density function theory. Our results indicate the charge density is transferred and mainly located on the Au atoms. The one-edge Au -doped AGNRs have low formation energy. So we predict that one-edge Au-doped AGNRs is an energetically favorable practice. The energy band structure of Au-doped AGNRs shows extra bands at near Fermi level in the valence band, which is cause to promote conductivity. The project density of states is calculated and reveals that the localization and hybridization between C-2p and Au-6s, 6p, 5d electronic states are much stronger in the valence band and the conduction band group. A localization state is induced due to the absence of the bonding charge between Au and H atoms, which contributes to H-1s electronic states at -0.13 eV near the Fermi level. It causes Fermi level is crossed by the conduction band to make becoming metallic.
机译:使用基于密度函数理论的局部密度近似来研究互掺杂扶手椅石墨烯纳米纳米纳米杆(AGNR)的充电密度,电子能带和密度。我们的结果表明电荷密度转移,主要位于Au原子上。一边Au -doped AGNRS具有低形成能量。因此,我们预测,一埃边缘AU-掺杂的AGNR是一种能量上有利的做法。 Au-掺杂AgNR的能带结构在价带内的近距离水平附近显示额外的带,这导致促进导电性。计算各国的项目密度,并揭示了C-2P和AU-6S,6P,5D电子状态之间的定位和杂交在价带和传导频段组中更强大。由于Au和H原子之间没有粘合电荷而导致定位状态,这有助于在Fermi水平附近的-0.13eV处有助于H-1S电子状态。它导致传导频带越过费米水平以使金属变成金属。

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