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Construction of MRAM reliability test platform

机译:MRAM可靠性测试平台的构建

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摘要

Magnetic random-access memory(MRAM)is a kind of desirable emerging memory,which promises non-volatility, high storage density, fast access speed and strong radiation resistivity. However, due to the immature fabrication process, reliability is a significant issue for emerging MRAM technology. In the paper, we propose and implement a MRAM reliability test platform and perform a series of tests of MRAM on this platform to evaluate MRAM reliability in terms of temperature variation, and supply voltage variation. The test results dictate the effectiveness of our proposed testing platform and illustrate relevant reliability metrics of current MRAM technology.
机译:磁随机存取存储器(MRAM)是一种理想的新兴存储器,其承诺非易波动,高存储密度,快速接近速度和强辐射电阻率。然而,由于制造过程不成熟,可靠性是新兴MRAM技术的重要问题。在本文中,我们提出并实施了MRAM可靠性测试平台,并在该平台上执行MRAM的一系列测试,以评估MRAM在温度变化和电源电压变化方面的可靠性。测试结果规定了我们所提出的测试平台的有效性,并说明了当前MRAM技术的相关可靠性指标。

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