Transfer of ultra-thin semi-conductor films onto flexible substrates

摘要

This study describes a process for transferring a 200 nm Si thin film from a SOI onto a flexible substrate. The objective is to find a way for applying a tensile strain onto a very thin semi-conductor film for tensile strain engineering. The processs is achieved with 200 mm wafers and based on a polymer temporary bonding process. Grinding and etching are used for removing the SOI backside substrate and buried oxide. The process leads to a 200 mm Si thin film transferred onto a dicing tape. No crack or ripple is observed on the film and further tensile strain experiments can be conducted on the structure.