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Theoretical Analysis and Experimental Optimization of Graphene/TMD Heterojunction Barristors

机译:石墨烯/ TMD异质结屏障的理论分析与实验优化

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We optimized the graphene/MoS_2 and graphene/WSe_2 heterojunction barristors in terms of on-/off-current densities and on/off-current ratio by inserting an APTES layer which suppresses the charge puddle effect. The on-/off-current densities and on/off-current ratio were improved by a factor of 2.1/15 and 32 in the graphene/MoS_2 barristor and 10/25 and 230 in the graphene/WSe_2 barristor, respectively. Particularly, we reported an unusual phenomenon that on-state current density increases as the measurement temperature decreases in the graphene/WSe_2 barristor. Finally, based on temperature-dependent current-voltage measurements coupled with first-principle density functional theory (DFT) calculations, we confirmed that the main operating mechanisms of graphene/MoS_2 and graphene/WSe_2 barristors were thermionic emission and trap-assisted tunneling processes, respectively.
机译:通过插入抑制电荷水坑效果的APTES层,在开/关电流密度和开/关电流比方面优化石墨烯/ MOS_2和石墨烯/ WSE_2异质结屏幕。在石墨烯/ MOS_2横向仪中,在石墨烯/ MOS_2横向仪中,在石墨烯/ MOS_2横梁和10/25和230中提高了开/关电流密度和开/关电流比。特别地,我们报道了一种不寻常的现象,即在石墨烯/ WSE_2面包中的测量温度降低,导通状态的电流密度增加。最后,基于与第一原理密度功能理论(DFT)计算耦合的温度相关的电流测量,我们证实了石墨烯/ MOS_2和石墨烯/ WSE_2面包的主要操作机制是热源发射和陷阱辅助隧道工艺,分别。

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