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Control of Direct Bonding Behavior by Interlayers

机译:中间层控制直接粘接行为

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摘要

Atmospheric pressure plasma treatments were used to control free surface energy of different areas on silicon wafers before bonding. Surface energy measurements in situ during annealing for this different areas are presented for SF_6 etching as well as acetylene, glycidyl methacrylate, tetramethylsilane and C_4F8 and coatings. The bonding energy can be permanently reduced by appropriate coatings or surface roughness. The results revel important aspects for the choice of precursors and parameters to obtain high contrast between the treated and untreated areas.
机译:在粘合前,使用大气压等离子体处理来控制硅晶片上不同区域的自由表面能。为SF_6蚀刻和乙炔,甲基丙烯酸缩水甘油酯,四甲基硅烷和C_4F8和涂层呈现出这种不同区域的退火期间原位的表面能量测量。可以通过适当的涂层或表面粗糙度永久地减少粘合能量。结果陶醉了前体和参数选择的重要方面,以获得治疗和未处理区域之间的高对比度。

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