Schematic Description of the Internal Stress Distribution Responsible for Defect Generation in Larger-Diameter PVT-Grown 4H-SiC Single Crystals

摘要

Growth stability necessary for the realization of larger-diameter PVT-grown SiC crystals with higher crystallinity was discussed from thermoelastic and thermodynamic viewpoints of SiC-PVT single crystal growth phenomena. A schematic interpretation based upon the equilibrium equations was presented for approximated estimation of thermoelastic stresses, and the effects of reactions between the vapor and carbon sources on the SiC growth were examined in the frame work of thermodynamic description for PVT-SiC growth.