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Synthesis and Photocatalytic Degradation Performance of g-C_3N_4/CQDs/SAPO-5 Ternary Composite

机译:G-C_3N_4 / CQDS / SAPO-5三元复合材料的合成和光催化降解性能

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Due to the fatal drawback of fast photo-reduced electron-hole pair recombination rate of g-C_3N_4, g-C_3N_4/CQDs/SAPO-5 ternary composite were prepared. Both of carbon quantum dots and SAPO-5 can form heterojunction with g-C_3N_4 to inhibit the recombination. Their properties were characterized by XRD, SEM, FT-IR, DRS and PL. Data of PL shows a much lower photo-reduced electron-hole pair recombination rate of g-C_3N_4/CQDs/SAPO-5. The effect of CQDs amount loaded on ternary composite on the RhB photodegradation performance under visible light was discussed in detail. The observed RhB degradation performances indicate that the order of photocatalytic activity is: g-C_3N_4/CQDs/SAPO-5> g-C_3N_4/ SAPO-5 > g-C_3N_4. g-C_3N_4/CQDs/SAPO-5 with CQDs load ratio of 0.25 w.t.% shows the best photodegradation performance. The highest efficiency is about 24.43% higher than g-C_3N_4/ SAPO-5 and 47.15% higher than pristine g-C_3N_4, respectively. This work is promising for developing novel g-C_3N_4-based photocatalysts for environmental purification.
机译:由于快速光降低的电子空穴对重组率的G-C_3N_4,制备了G-C_3N_4 / CQDS / SAPO-5三元复合材料的致命缺点。碳量子点和SAPO-5都可以与G-C_3N_4形成异质结以抑制重组。它们的性质以XRD,SEM,FT-IR,DRS和PL为特征。 P1的数据显示了G-C_3N_4 / CQDS / SAPO-5的更低的光降低电子 - 空穴对重组率。详细讨论了在可见光下进行三元复合材料对三元复合材料的CQDS量的影响。所观察到的RHB降解性能表明光催化活性的顺序是:G-C_3N_4 / CQDS / SAPO-5> G-C_3N_4 / SAPO-5> G-C_3N_4。 G-C_3N_4 / CQDS / SAPO-5具有0.25 W.T.%的CQDS负载比显示最佳光降解性能。最高效率比G-C_3N_4 / SAPO-5高约24.43%,分别高于原始G-C_3N_4的47.15%。这项工作很有希望用于开发基于G-C_3N_4的光催化剂的环境纯化。

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