Improved Photoelectric Properties of Znd.x/Graphene Heterostructures

摘要

In this work, the photoelectric properties of ZnO_(1-x)/graphene heterostructures were investigated. Such ZnO_(1-x)/graphene heterostructures were constructed from non-stoichiometric zinc oxide (ZnO_(1-x)) film and graphene by first depositing ZnO_(1-x) layer through radio frequency magnetron sputtering onto silicon wafers with SiO_2 layer and then transferring graphene via a wet method. It was revealed that such heterostructures could have improved photoelectric properties. Compared with ZnO_(1-x) films, the absorbance of the ZnO_(1-x)/graphene heterostructures in visible and near-infrared region was enhanced;;and due to the high conductivity of graphene, the photocurrent was significantly enhanced both in dark and under irradiation of a 700 run light. By calculating the absolute current gain, it was revealed that the fabricated ZnO_(1-x)/graphene heterostructures would have a higher current gain. Thus, such ZnO_(1-x)/graphene heterostructures would be promisingly applied in visible light to near-infrared detection devices.