As Flux Controlled Formation of (Al,Ga)As Axial Nanowire Heterostructures

摘要

We develop a model of the axial (Al,Ga)As nanowire heterostructure formation via the vapor-liquid-solid growth. The dependence of interfacial abruptness of heterostructures on growth temperature and growth rate is studied. We show that the interfaces become sharper with decreasing of the nanowire growth rate. We propose a method of the (AlGa)As axial heterostructure nanowire growth via an alteration of As flux.