Influence of Different Sol-gel Spin Coating Speed on Memristive Behaviour of Pt/TiO2/ZnO/ITO Device

摘要

Composite titanium dioxide (TiO2) and zinc oxide (ZnO) thin films were deposited on indium tin oxide (ITO) substrates using sol-gel spin coating technique. The electrical and physical characterizations of three different sol-gel spin coating speed were investigated using two-probe current-voltage (I-V) measurement, field emission scanning electron microscopy (FESEM) and surface profiler (SP) respectively. The I-V measurement results showed the pinched hysteresis loop for every single of devices thus indicate that all the devices are memristive. R_(off)/R_(on) ratio which was defined from the hysteresis loop of device with higher spin speed was slightly higher compared to others.