Design and implementation of a Gallium-Nitride-based power module for light electro-mobility applications

摘要

Power modules using new wide-bandgap devices like gallium nitride (GaN) are subject to stringent thermal and electrical requirements due to the high heat flux density and the fast switching transients of these new devices. This work presents the design and implementation of a 650 V GaN-based prototype half-bridge power module for a 2.3 kW battery charger using magnetic field canceling and an artificial Kelvin connection to decrease parasitic inductances and achieve a measured peak slew rate of 60 kV/μs, together with an area optimized layout and a copper heat spreader for a reduced per chip junction to ambient thermal resistance of 3.5 to 3.6 K/W, leading to a half-bridge with more than 170 W/in^{3power density.}