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Formation of Si Nanowires by Electro-reduction of Porous Ni/SiO_2 Blocks in Molten CaCl_2

机译:通过在熔融CaCl_2中的多孔Ni / SiO_2嵌段的电解形成Si纳米线

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Electro-reduction of porous Ni/SiO_2 blocks has been investigated in molten CaCl_2 at 1173 K aiming to control the morphology of the produced silicon nanowires. It was confirmed that silicon nanowires with straight morphology were successfully prepared, and nano-sized nickel-silicon droplets formed at the head of silicon nanowires. The prepared silicon nanowires had a wide diameter distribution ranging from 80 to 350 nm, and a length as long as several micrometers. Cyclic voltammograms indicated that nickel additives did not change the mechanism of electrochemical reduction of SiO_2.
机译:在1173K的熔融CaCl_2中研究了多孔Ni / SiO_2嵌段的电氧化物,旨在控制所产生的硅纳米线的形态。确认,成功地制备了具有直流形态的硅纳米线,并且形成在硅纳米线的头部处形成的纳米尺寸的镍硅液滴。制备的硅纳米线的宽直径分布范围为80至350nm,长度为几微米。循环伏安图表明镍添加剂没有改变SiO_2的电化学减少机制。

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