Investigation on Switching Operation in Resistive RAM Using In-Situ TEM

摘要

Our recent works on resistive RAMs (ReRAMs) are reviewed, where in-situ transmission electron microscopy (TEM) realizing simultaneous electric measurements and TEM observations was applied to investigate resistive switching operation of some conductive bridging RAMs (CBRAMs). In multiple switching cycles, the Cu conductive filament was experimentally confirmed to appear in the Set process giving the low resistance state (LRS, on-state) and to disappear in the Reset process giving the high resistance state (HRS, off-state). No drastic change in the geometry of the conductive filament was seen when the switching current was small. With increasing the current, the filament became thick, but its position was unstable, and too much Cu moved into the switching layer in a wide area. This may induce the device degradation and failure.