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Using Supply Voltage Metal Layers as Low Cost Means to Hinder Several Types of Physical Attacks

机译:使用电源电压金属层作为低成本意味着妨碍几种类型的物理攻击

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In this paper, we describe the idea of using the metallization layers uséd for supplying ICs with V_(DD) and GND as a low-cost countermeasure for semi-invasive front-side attacks. The core of our idea is to realize both supply voltages - GND and V_(DD) - no longer fixed on metal one but to shift them up in different top metal layers and to implement it both as metal plane. This helps to prevent semiinvasive attacks that require an optical access to the transistor level while the device is fully functional. An additional countermeasure effect may be hindering of EMA, PA and microprobing. Early experiments with a simple 3x3 multiplier show that our idea can be used with standard layout tools such as encounter from synopsis.
机译:在本文中,我们描述了使用金属化层USÉD用V_(DD)和GND作为半侵入式前侧攻击的低成本对策来提供IC的想法。我们的想法的核心是实现电源电压 - GND和V_(DD) - 不再固定在金属上,而是将它们转移到不同的顶部金属层中并将其实施为金属平面。这有助于防止需要对晶体管电平进行光学访问的半vasive攻击,而该设备功能完全正常。额外的对策效果可能是妨碍EMA,PA和微生物。具有简单3x3乘法器的早期实验表明我们的想法可以与标准布局工具一起使用,例如腹膜概要。

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