Molecular Dynamics Simulation on the Influence of Quartz Substrate Temperature on Low Energy Argon Ion Bombardment Model in Dry Etching Process

摘要

We investigated the effect of temperature on the physical sputtering of an a-quartz substrate by low energy Argon ion method using molecular dynamics simulation. The Second Generation Charge-Optimized Many Body (COMB10) potential developed by Shan et al was chosen to model the interatomic potential of quartz substrate and Lennard-Jones potential was used to model the surface interaction between Ar ions and quartz substrate. The incident ion energies, E_i were set at 50eV, l00eV and 150eV and substrate temperature were set at 300K and 800K. Simulations results show that the temperatures significantly affected the sputtering yield at higher energised Ar ions. For instance, the sputtering yield at l00eV show a significant increase as we varied the temperature as compared to the sputtering yield at 50eV.