Memristor Based Ternary Content Addressable Memory (MTCAM) Cell

摘要

Beyond 32nm, as the scaling of CMOS devices become impractical so the need arises to incorporate the emerging nano-technologies such as memristor in existing design in order to meet the future computing requirements. This paper introduces the design of memristor based ternary content addressable memory (MTCAM) cell at 32nm technology. Firstly SPICE compatible nonlinear drift models of memristor using different existing window function such as Joglekar, Biolek, Strukov, Prodromakis are investigated. The memristor model using Biolek window function shows best results in terms of charge, current, and power dissipation and was used to design MTCAM cell. Further the comparison of MTCAM cells and CMOS based TCAM is done on the basis of write time, search time and power dissipation. Also the effect of temperature on power dissipation and supply voltage variation on write time of MTCAM cell performance has been analyzed.